型号:

STF6N62K3

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 620V 5.5A TO-220FP
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STF6N62K3 PDF
其它有关文件 STF6N62K3 View All Specifications
标准包装 50
系列 SuperMESH™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 620V
电流 - 连续漏极(Id) @ 25° C 5.5A
开态Rds(最大)@ Id, Vgs @ 25° C 1.28 欧姆 @ 2.8A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 50µA
闸电荷(Qg) @ Vgs 34nC @ 10V
输入电容 (Ciss) @ Vds 875pF @ 50V
功率 - 最大 30W
安装类型 通孔
封装/外壳 TO-220-3 整包
供应商设备封装 TO-220FP
包装 管件
其它名称 497-12585-5
STF6N62K3-ND
相关参数
HMC478SC70E Hittite Microwave Corporation IC GAIN BLOCK AMP SC70
BTN-001B CSR PLC KIT DEV BLUETUNES1 HEADSET/SPKR
Y92E-F5R4 Omron Electronics Inc-IA Div MOUNTNG BRAKT PLASTC FOR M5 SENS
1810LP07A200T Johanson Technology Inc FILTER LOWPASS GSM/CDMA1810 MHZ
RJK0348DSP-00#J0 Renesas Electronics America MOSFET N-CH 30V 22A 8-SOP
Y92E-D1R6 Omron Electronics Inc-IA Div MOUNTING BRACKET 1SCREW FOR E2S
CR8349-1000-N CR Magnetics Inc TRANS CURRENT 20-1KHZ PCB
HMC478SC70E Hittite Microwave Corporation IC GAIN BLOCK AMP SC70
CR8420-1000-G CR Magnetics Inc TRANSFORMER GROUND FAULT WIRE LD
Y92E-B12 Omron Electronics Inc-IA Div BRACKET MOUNTNG M12 PROXY SENSRS
0622029510 Molex Inc INSERTION MODULE
HSM92-044.2368M Connor-Winfield OSCILLATOR 44.2368MHZ HCMOS SMD
HMC478SC70E Hittite Microwave Corporation IC GAIN BLOCK AMP SC70
CR2550-R CR Magnetics Inc CURRENT INDICATOR REMOTE RED 11"
IRLR7821TRPBF International Rectifier MOSFET N-CH 30V 65A DPAK
GSDB06S1 Honeywell Sensing and Control SWITCH ROTARY SIDE
HEDS-8911-152 Avago Technologies US Inc. CONNECTOR AEDS-8XXX SERIES
AC1020 Acme Electric/Amveco/Actown TRANSFORMER CURRENT 20.0 AMP
ISL55016IRTZ-T7 Intersil IC AMP MMIC BIPOLAR DIFF 6-TDFN
IRLR7821TRPBF International Rectifier MOSFET N-CH 30V 65A DPAK